?2001 fairchild semiconductor corporation rev. a1, february 2001 mje13004/13005 npn silicon transistor absolute maximum ratings t c =25 c unless otherwise noted electrical characteristics t c =25 c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% pulse symbol parameter value units v cbo collector-base voltage : mje13004 : MJE13005 600 700 v v v ceo collector-emitter voltage : mje13004 : MJE13005 300 400 v v v ebo emitter-base voltage 9 v i c collector current (dc) 4 a i cp collector current (pulse) 8 a i b base current 2 a p c collector dissipation (t c =25 c) 75 w t j junction temperature 150 c t stg storage temperature - 65 ~ 150 c symbol parameter test condition min. typ. max. units bv ceo (sus) collector-emitter sustaining voltage : mje13004 : MJE13005 i c = 10ma, i b = 0 300 400 v v i ebo emitter cut-off current v eb = 9v, i c = 0 1 ma h fe *dc current gain v ce = 5v, i c = 1a v ce = 5v, i c = 2a 10 8 60 40 v ce (sat) *collector-emitter saturation voltage i c = 1a, i b = 0.2a i c = 2a, i b = 0.5a i c = 4a, i b = 1a 0.5 0.6 1 v v v v be (sat) *base-emitter saturation voltage i c = 1a, i b = 0.2a i c = 2a, i b = 0.5a 1.2 1.6 v v c ob output capacitance v cb = 10v, f = 0.1mhz 65 pf f t current gain bandwidth product v ce = 10v, i c = 0.5a 4 mhz t on turn on time v cc = 125v, i c = 2a i b1 = - i b2 = 0.4a r l = 62.5 ? 0.8 s t stg storage time 4 s t f fall time 0.9 s mje13004/13005 high voltage switch mode application high speed switching suitable for switching regulator and motor control 1.base 2.collector 3.emitter 1 to-220
?2001 fairchild semiconductor corporation mje13004/13005 rev. a1, february 2001 typical characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. collector output capacitance figure 4. turn on time figure 5. turn off time figure 6. safe operating area 0.01 0.1 1 10 1 10 100 v ce = 5v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 i c = 4 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.1 1 10 100 1000 1 10 100 1000 c ob [pf], capacitance v cb [v], collector-base voltage 0.01 0.1 1 10 0.01 0.1 1 10 v cc =125v i c =5i b i b1 = - i b2 t d , v be (off)=5v t r t r , t d [ s], turn on time i c [a], collector current 0.01 0.1 1 10 0.1 1 10 v cc =125v i c =5i b t f t stg t stg , t f [ s], turn off time i c [a], collector current 1 10 100 1000 0.01 0.1 1 10 mje13004 MJE13005 500 s 5ms 1ms dc i c [a], collector current v ce [v], collector-emitter voltage
?2001 fairchild semiconductor corporation mje13004/13005 rev. a1, february 2001 typical characteristics (continued) figure 7. power derating 0 255075100125150175 0 10 20 30 40 50 60 70 80 90 100 p c [w], power dissipation tc[ o c], case temperature
4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 package demensions ?2001 fairchild semiconductor corporation rev. a1, february 2001 mje13004/13005 dimensions in millimeters
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